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Nanowire thickness alters GaAs band structure

2018-07-24

Physics World reports that Researchers from Solid State Physics have grown single continuous GaAs nanowires consisting of segments of pure wurtzite and zincblende phases. Using photoluminescence spectroscopy, they found that the spatial confinement along the radius of a nanowire resulted in bending of the band structure of the material.

Read the article "Radial band bending at wurtzite–zinc-blende–GaAs interfaces" by Irene Geijselaers, Sebastian Lehmann, Kimberly A Dick, and Mats-Erik Pistol in Nano Futures, Volume 2, Number 3, DOI: 10.1088/2399-1984/aac96c or more in Physicsworld (in English).

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